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Optimized reactive ion etch process for high performance SiC bipolar junction transistors
Journal Article
Overview
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Additional Document Info
Overview
publication date
July 1, 2007
has restriction
closed
Date in CU Experts
September 6, 2013 12:31 PM
Full Author List
Goulakov AB; Zhao F; Perez-Wurfl I; Torvik JT; Van Zeghbroeck B
author count
5
citation count
2
published in
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Other Profiles
International Standard Serial Number (ISSN)
0734-2101
Electronic International Standard Serial Number (EISSN)
1520-8559
Digital Object Identifier (DOI)
https://doi.org/10.1116/1.2436502
Additional Document Info
start page
961
end page
966
volume
25
issue
4