Phase change nanodot arrays fabricated using a self-assembly diblock copolymer approach Journal Article uri icon



  • Self-assembling diblock copolymer, polystyrene-b-poly-4-vinylpyridine (PS-b-P4VP), was used as the template for fabricating phase change nanostructures. The high density GeSb nanodots were formed by etching into an amorphous GeSb thin film using silica hard mask which was patterned on top of polymer. The nanodot arrays are 15nm in diameter with 30nm spacing. This is smaller than most structures obtained by e-beam lithography. Time-resolved x-ray diffraction studies showed that the phase transition occurred at 235°C, which is 5°C lower than blanket GeSb film but higher than that of Ge2Sb2Te5 (150°C). GeSb showed good temperature stability for fabrication of small memory devices.

publication date

  • July 2, 2007

has restriction

  • closed

Date in CU Experts

  • July 25, 2014 3:35 AM

Full Author List

  • Zhang Y; Wong H-SP; Raoux S; Cha JN; Rettner CT; Krupp LE; Topuria T; Milliron DJ; Rice PM; Jordan-Sweet JL

author count

  • 10

Other Profiles

International Standard Serial Number (ISSN)

  • 0003-6951

Electronic International Standard Serial Number (EISSN)

  • 1077-3118

Additional Document Info


  • 91


  • 1