Electroluminescent SrS:Ce thin films grown by gas‐source molecular‐beam epytaxy Journal Article uri icon

Overview

abstract

  • Abstract— SrS:Ce thin films have been grown by gas‐source molecular‐beam epitaxy (GSMBE) for the development of high‐luminance, high‐efficiency electroluminescent (EL) flat‐panel displays. The growth conditions have been systematically investigated as a function of growth temperature, S to Sr flux ratio, Ce concentration, and ZnS and Mn co‐evaporation. Single‐crystal SrS and high‐quality SrS:Ce layers were successfully grown on GaAs and glass substrates, respectively, without a post‐annealing process at temperatures as low as 600°C. It was found that the grain size was greatly increased by co‐doping with Ga2S3 during the growth, providing a possible means to further decrease the growth temperature.

publication date

  • March 1, 1998

has restriction

  • closed

Date in CU Experts

  • April 12, 2014 3:43 AM

Full Author List

  • Tong W; Yang T; Chaichimansour M; Park W; Wagner BK; Summers CJ; Sun S; King CN

author count

  • 8

Other Profiles

International Standard Serial Number (ISSN)

  • 1071-0922

Electronic International Standard Serial Number (EISSN)

  • 1938-3657

Additional Document Info

start page

  • 29

end page

  • 33

volume

  • 6

issue

  • 1