Recovery dynamics in proton-bombarded semiconductor saturable absorber mirrors Journal Article uri icon

Overview

abstract

  • Reduction of device response time, resulting from the proton bombardment of InGaAs/InP-based semiconductor saturable absorbers, was studied experimentally using an ultrafast degenerate, cross- polarized pump-probe technique. Proton bombardment is shown to reduce device response times to ∼1 ps at low optical excitation densities. Under high excitation, the device dynamics are dominated by induced absorption. The extended recovery of highly excited carriers appears to be less sensitive to defects created by bombardment. Mode locking was demonstrated with the proton-bombarded samples in an erbium-doped fiber laser.

publication date

  • May 28, 2001

has restriction

  • bronze

Date in CU Experts

  • April 6, 2014 8:31 AM

Full Author List

  • Gopinath JT; Thoen ER; Koontz EM; Grein ME; Kolodziejski LA; Ippen EP; Donnelly JP

author count

  • 7

Other Profiles

International Standard Serial Number (ISSN)

  • 0003-6951

Electronic International Standard Serial Number (EISSN)

  • 1077-3118

Additional Document Info

start page

  • 3409

end page

  • 3411

volume

  • 78

issue

  • 22