Comparison of 3C-SiC and 4H-SiC Power MOSFETs Journal Article uri icon



  • A comprehensive comparison of 3C-SiC and 4H-SiC power MOSFETs was performed, aimed at quantifying and comparing the devices’ on-resistance and switching loss. To this end, the relevant material parameters were collected using experimental data where available, or those obtained by simulation. This includes the bulk mobility as a function of doping density, the breakdown field as a function of doping and the MOSFET channel mobility. A device model was constructed and then used to calculate the on-resistance and breakdown voltage of a properly scaled device as a function of the doping density of the blocking layer. A SPICE model was constructed to explore the switching transients and switching losses. The simulations indicate that, for the chosen material parameters, a 600 V 3C-SiC MOSFET has an on-resistance, which is less than half that of a 4H-SiC MOSFET as are the switching losses in the device.

publication date

  • June 5, 2018

has restriction

  • closed

Date in CU Experts

  • January 31, 2019 8:01 AM

Full Author List

  • Van Zeghbroeck BJ; Fardi H

author count

  • 2

Other Profiles

Electronic International Standard Serial Number (EISSN)

  • 1662-9752

Additional Document Info

start page

  • 774

end page

  • 777


  • 924