Hot Filament CVD Growth of 4H-SiC Epitaxial Layers Journal Article uri icon



  • Hot filament CVD (HFCVD) growth of undoped 4H-SiC epitaxial layers on 100 mm n-type 4o-off 4H-SiC substrates is presented as an alternate growth method for the first time. High quality crystalline material with a low density of polytype inclusions has been demonstrated and characterized with optical micrographs, SEM imaging, micro-Raman measurements, and high resolution XRD. Typical growth rates are ~3 μm/hour. Double rocking omega scans revealed diffraction peaks with a FWHM of 23 arcsec.

publication date

  • June 5, 2018

has restriction

  • closed

Date in CU Experts

  • January 31, 2019 7:57 AM

Full Author List

  • Van Zeghbroeck BJ; Robinson H; Brow RR

author count

  • 3

Other Profiles

Electronic International Standard Serial Number (EISSN)

  • 1662-9752

Additional Document Info

start page

  • 120

end page

  • 123


  • 924