Breakdown Field Model for 3C-SiC Power Device Simulations Journal Article uri icon



  • Modeling and simulation of 3C-SiC power devices such as MOSFETs and diodes requires a model for the breakdown field that is consistent with the Monte-Carlo-simulated ionization rates of electron and holes and supported by experimental results. The challenge one faces is the limited number of publications reporting such calculations and the limited availability of high-quality ionization breakdown data for 3C-SiC diodes. We therefore performed a series of 2D simulations of both n-type and p-type Schottky diodes and p+-n diodes that confirms the general breakdown field trend with doping density obtained from experiments. We uncovered a difference between n-type and p-type diode breakdown behavior, identified the discrepancy between the calculations and the experimental data, and extracted a simple breakdown field model, useful for further 3C-SiC device design and simulation.

publication date

  • June 1, 2018

has restriction

  • closed

Date in CU Experts

  • January 21, 2019 7:29 AM

Full Author List

  • Fardi H; Van Zeghbroeck BJ

author count

  • 2

Other Profiles

Electronic International Standard Serial Number (EISSN)

  • 1662-9752

Additional Document Info

start page

  • 617

end page

  • 620


  • 924