Graphene-Silicon Heterojunction Infrared Photodiode at 1.3/1.55 μm Journal Article uri icon



  • A novel infrared photodiode based on a graphene/n-type silicon heterojunction is explored. The heterojunction photodiode of interest has a large Schottky barrier that results in a low dark current. Graphene serves as the absorbing medium at a wavelength for which silicon is transparent. Under infrared illumination, photo-excited electrons in the graphene gain energy and thus have a greater probability to overcome the barrier and contribute to the photocurrent. We have demonstrated photodiode operation of a graphene/n-Si heterojunction at 1.3 and 1.55 μm wavelength, with 14% internal quantum efficiency and 1.5 pW/Hz1/2 noise-equivalent power, for potential use in silicon photonics.

publication date

  • May 24, 2016

has restriction

  • closed

Date in CU Experts

  • November 30, 2016 10:02 AM

Full Author List

  • Ou TM; Borsa T; Van Zeghbroeck BJ

author count

  • 3

Other Profiles

Electronic International Standard Serial Number (EISSN)

  • 1662-9752

Additional Document Info

start page

  • 1153

end page

  • 1157


  • 858