publication venue for
- Demonstration of long-pulse power amplification at 1 GHz using 4H-SiC RF BJTs on a conductive substrate 2007
- A NOVEL HIGH-SPEED SILICON MSM PHOTODETECTOR OPERATING AT 830-NM WAVELENGTH 1995
- 105-GHZ BANDWIDTH METAL-SEMICONDUCTOR METAL PHOTODIODE 1988
- 5.2-GHZ BANDWIDTH MONOLITHIC GAAS OPTOELECTRONIC RECEIVER 1988
- SUBMICROMETER GAAS-MESFET WITH SHALLOW CHANNEL AND VERY HIGH TRANSCONDUCTANCE 1987
- SCALED GAAS-MESFETS WITH GATE LENGTH DOWN TO 100 NM 1986